Product Summary
The FDC658P is a P-Channel Logic Level MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The FDC658P is well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.
Parametrics
FDC658P absolute maximum ratings: (1)VDSS Drain-Source Voltage: -30 V; (2)VGSS Gate-Source Voltage - Continuous: ±20 V; (3)ID Drain Current: -4 A; (4)PD Maximum Power Dissipation: 1.6 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150℃.
Features
FDC658P features: (1)-4 A, -30 V. RDS(ON)= 0.050Ω @ VGS = -10 V; RDS(ON)= 0.075Ω @ VGS = -4.5 V; (2)Low gate charge (8nC typical); (3)High performance trench technology for extremely low RDS(ON); (4)SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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FDC658P |
Fairchild Semiconductor |
MOSFET SSOT-6 P-CH -30V |
Data Sheet |
Negotiable |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
FDC6000NZ |
Fairchild Semiconductor |
MOSFET Dual N-Channel 2.5V Spec PowerTrench |
Data Sheet |
Negotiable |
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FDC6000NZ_F077 |
Fairchild Semiconductor |
MOSFET 2.5V DUAL N-CH |
Data Sheet |
Negotiable |
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FDC6020C |
Fairchild Semiconductor |
MOSFET Complementary PowerTrench |
Data Sheet |
Negotiable |
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FDC6020C_F077 |
Fairchild Semiconductor |
MOSFET Complementary PwrTrh |
Data Sheet |
Negotiable |
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FDC602P |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 2.5V |
Data Sheet |
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FDC602P_F095 |
Fairchild Semiconductor |
MOSFET -20V -5.5A P-CH POWERTRENCH |
Data Sheet |
Negotiable |
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