Product Summary
The IXFN55N50 is a Power MOSFET. The applications of the device are (1)DC-DC converters; (2)Switched-mode and resonant-mode power supplies, >500kHz switching; (3)DC choppers; (4)Pulse generation; (5)Laser drivers.
Parametrics
IXFN55N50 absolute maximum ratings: (1)VDSS: 500 V; (2)VGH(th): 5.5 V; (3)IGSS: ±200 nA; (4)IDSS: 100 μA; (5)VGS = 0 V TJ; (6)RDS(on): 85 mΩ.
Features
IXFN55N50 features: (1)RF capable Mosfets; (2)Rugged polysilicon gate cell structure; (3)Double metal process for low gate resistance; (4)Unclamped Inductive Switching (UIS) rated; (5)Low package inductance- easy to drive and to protect; (6)Fast intrinsic rectifier.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||
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IXFN55N50 |
Ixys |
MOSFET 55 Amps 500V 0.08 Rds |
Data Sheet |
Negotiable |
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IXFN55N50F |
Ixys |
MOSFET |
Data Sheet |
Negotiable |
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