Product Summary

The IXFN55N50 is a Power MOSFET. The applications of the device are (1)DC-DC converters; (2)Switched-mode and resonant-mode power supplies, >500kHz switching; (3)DC choppers; (4)Pulse generation; (5)Laser drivers.

Parametrics

IXFN55N50 absolute maximum ratings: (1)VDSS: 500 V; (2)VGH(th): 5.5 V; (3)IGSS: ±200 nA; (4)IDSS: 100 μA; (5)VGS = 0 V TJ; (6)RDS(on): 85 mΩ.

Features

IXFN55N50 features: (1)RF capable Mosfets; (2)Rugged polysilicon gate cell structure; (3)Double metal process for low gate resistance; (4)Unclamped Inductive Switching (UIS) rated; (5)Low package inductance- easy to drive and to protect; (6)Fast intrinsic rectifier.

Diagrams

IXFN55N50 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IXFN55N50
IXFN55N50

Ixys

MOSFET 55 Amps 500V 0.08 Rds

Data Sheet

Negotiable 
IXFN55N50F
IXFN55N50F

Ixys

MOSFET

Data Sheet

Negotiable