(China (Mainland))
Product Summary
The IRLMS6802 is a P-Channel MOSFET from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
Parametrics
IRLMS6802 absolute maximum ratings: (1)VDS Drain- Source Voltage -20 V; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ -4.5V -5.6V; (3)ID @ TA= 70℃ Continuous Drain Current, VGS @ -4.5V -4.5 A; (4)IDM Pulsed Drain Current -45A; (5)PD @TA = 25℃ Power Dissipation 2.0W; (6)PD @TA = 70℃ Power Dissipation 1.3W; (7)Linear Derating Factor 0.016 W/℃; (8)EAS Single Pulse Avalanche Energy 31 mJ; (9)VGS Gate-to-Source Voltage ± 12 V; (10)TJ, TSTG Junction and Storage Temperature Range -55 to + 150℃.
Features
IRLMS6802 features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)Surface Mount; (4)Available in Tape & Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRLMS6802 |
Other |
|
Data Sheet |
Negotiable |
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IRLMS6802PbF |
Other |
|
Data Sheet |
Negotiable |
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IRLMS6802TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -5.6A 50mOhm 11nC Log Lvl |
Data Sheet |
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IRLMS6802TR |
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MOSFET P-CH 20V 5.6A 6-TSOP |
Data Sheet |
Negotiable |
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