(China (Mainland))
Product Summary
The IRLMS1503TRPBF is a HEXFET power MOSFET from international rectifoer utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRLMS1503TRPBF absolute maximum ratings: (1)ID at Ta=25℃, continuous drain current, VGS at 10V: 3.2A; (2)ID at Ta=70℃, continuous drain current, VGS at 10V: 2.6A; (3)IDM, pulsed drain current: 18A; (4)PD, power dissipation: 13mW; (5)linera derating factor: 4.3mW/℃; (6)VGS, gate to source voltage: ±20V; (7)Tj, Tstg, junction and storage temperature range: -55 to 150℃.
Features
IRLMS1503TRPBF features: (1)generation V technology; (2)Micro6 package style; (3)ultra low RDS(on); (4)N-channel MOSFET.
Diagrams
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 IRLMS1503TRPBF |
International Rectifier |
MOSFET MOSFT 30V 3.2A 100mOhm 6.4nC LogLvl |
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Data Sheet |
Negotiable |
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