Product Summary

The IRLML6401 is a P-Channel MOSFET from International Rectifier utilizing advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRLML6401 is well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

Parametrics

IRLML6401 absolute maximum ratings: (1)VDS, Drain- Source Voltage: -12 V; (2)ID @ TA = 25℃, Continuous Drain Current, VGS @ -4.5V: -4.3A; (3)ID @ TA= 70℃, Continuous Drain Current, VGS @ -4.5V: -3.4 A; (4)IDM, Pulsed Drain Current: -34A; (5)PD @TA = 25℃, Power Dissipation: 1.3W; (6)PD @TA = 70℃, Power Dissipation: 0.8W; (7)Linear Derating Factor: 0.01 W/℃; (8)EAS, Single Pulse Avalanche Energy: 33 mJ; (9)VGS, Gate-to-Source Voltage: ± 8.0 V; (10)TJ, TSTG, Junction and Storage Temperature Range: -55 to + 150℃.

Features

IRLML6401 features: (1)Ultra Low On-Resistance; (2)P-Channel MOSFET; (3)SOT-23 Footprint; (4)Low Profile (<1.1mm); (5)Available in Tape and Reel; (6)Fast Switching; (7)1.8V Gate Rated.

Diagrams

IRLML6401 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRLML6401
IRLML6401
Other

Data Sheet
Negotiable 
IRLML6401GTRPBF
IRLML6401GTRPBF
International Rectifier
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
Data Sheet
0-1: $0.32
1-25: $0.18
25-100: $0.12
100-250: $0.11
IRLML6401TRPBF
IRLML6401TRPBF
International Rectifier
MOSFET MOSFT P-Ch -4.3A 50mOhm 10nC Log Lvl
Data Sheet
0-1: $0.31
1-25: $0.17
25-100: $0.11
100-250: $0.10
IRLML6401TR
IRLML6401TR

MOSFET P-CH 12V 4.3A SOT-23
Data Sheet
Negotiable 
IRLML6401PbF
IRLML6401PbF
Other

Data Sheet
Negotiable