Product Summary
The IRLML5103 is a HEXFET power MOSFET from international rectifoer utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRLML5103 absolute maximum ratings: (1)ID at Ta=25℃, continuous drain current, VGS at -10V: -0.76A; (2)ID at Ta=70℃, continuous drain current, VGS at -10V: -0.61A; (3)IDM, pulsed drain current: -4.8A; (4)PD, power dissipation: 540mW; (5)linera derating factor: 4.3mW/℃; (6)VGS, gate to source voltage: ±20V; (7)Tj, Tstg, junction and storage temperature range: -55 to 150℃.
Features
IRLML5103 features: (1)generation V technology; (2)ultra low on-resistance; (3)P-channel MOSFET; (4)SOT-23 footprint; (5)low profile; (6)available in tape and reel; (7)fast switching.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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IRLML5103 |
Other |
Data Sheet |
Negotiable |
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IRLML5103GTRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl |
Data Sheet |
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IRLML5103TRPBF |
International Rectifier |
MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl |
Data Sheet |
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IRLML5103TR |
MOSFET P-CH 30V 760MA SOT-23 |
Data Sheet |
Negotiable |
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