Product Summary

The IRLML5103 is a HEXFET power MOSFET from international rectifoer utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRLML5103 absolute maximum ratings: (1)ID at Ta=25℃, continuous drain current, VGS at -10V: -0.76A; (2)ID at Ta=70℃, continuous drain current, VGS at -10V: -0.61A; (3)IDM, pulsed drain current: -4.8A; (4)PD, power dissipation: 540mW; (5)linera derating factor: 4.3mW/℃; (6)VGS, gate to source voltage: ±20V; (7)Tj, Tstg, junction and storage temperature range: -55 to 150℃.

Features

IRLML5103 features: (1)generation V technology; (2)ultra low on-resistance; (3)P-channel MOSFET; (4)SOT-23 footprint; (5)low profile; (6)available in tape and reel; (7)fast switching.

Diagrams

IRLML5103 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRLML5103
IRLML5103

Other


Data Sheet

Negotiable 
IRLML5103GTRPBF
IRLML5103GTRPBF

International Rectifier

MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl

Data Sheet

0-1: $0.25
1-25: $0.14
25-100: $0.09
100-250: $0.08
IRLML5103TRPBF
IRLML5103TRPBF

International Rectifier

MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl

Data Sheet

0-1: $0.24
1-25: $0.13
25-100: $0.09
100-250: $0.08
IRLML5103TR
IRLML5103TR


MOSFET P-CH 30V 760MA SOT-23

Data Sheet

Negotiable