(China (Mainland))
Product Summary
The IRLML2803 is a HEXFET power MOSFET from international rectifoer utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well know for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRLML2803 absolute maximum ratings: (1)ID @ TA=25℃, continuous drain current, VGS at 10V: 1.2A; (2)ID @ TA=70℃, continuous drain current, VGS at 10V: 0.93A; (3)IDM, pulsed drain current: 7.3A; (4)PD, power dissipation: 540mW; (5)linear derating factor: 4.3mW/℃; (6)VGS, gate to source voltage: ±20V; (7)Tj, Tstg, junction and storage temperature range: -55 to 150℃.
Features
IRLML2803 features: (1)generation V technology; (2)ultra low on-resistance; (3)N-channel MOSFET; (4)SOT-23 footprint; (5)low profile; (6)available in tape and reel; (7)fast switching.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 IRLML2803GPbF |
Other |
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Data Sheet |
Negotiable |
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IRLML2803GTRPBF |
International Rectifier |
MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl |
Data Sheet |
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IRLML2803TRPBF |
International Rectifier |
MOSFET MOSFT 30V 1.2A 250mOhm 3.3nC LogLvl |
Data Sheet |
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IRLML2803TR |
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MOSFET N-CH 30V 1.2A SOT-23 |
Data Sheet |
Negotiable |
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IRLML2803PbF |
Other |
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Data Sheet |
Negotiable |
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