Product Summary

The FP1L3N is a PNP silicon epitaxial transistor For mid-speed switching.

Parametrics

FP1L3N absolute maximum ratings: (1)Collector to base voltage VCBO -25 V; (2)Collector to emitter voltage VCEO -25 V; (3)Emitter to base voltage VEBO -10 V; (4)Collector current (DC) IC(DC) -0.7 A; (5)Collector current (Pulse) IC(pulse) -1.0 A; (6)Base current (DC) IB(DC) -20 mA; (7)Total power dissipation PT 200 mW; (8)Junction temperature Tj 150℃; (9)Storage temperature Tstg -55 to +150℃.

Features

FP1L3N features: (1)Up to 0.7 A current drive available; (2)On-chip bias resistor; (3)Low power consumption during drive.

Diagrams

FP1L3N block diagram