Product Summary

The FDV303N is an N-Channel enhancement mode field effect transistor. It is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device FDV303N is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. The FDV303N can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Parametrics

FDV303N absolute maximum ratings: (1)VDSS Drain-Source Voltage, Power Supply Voltage: 25 V; (2)VGSS Gate-Source Voltage, VIN: 8 V; (3)ID Drain/Output Current: 0.68 A; (4)PD Maximum Power Dissipation: 0.35 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150℃; (6)ESD Electrostatic Discharge Rating: 6.0 kV.

Features

FDV303N features: (1)25 V, 0.68 A continuous, 2 A Peak. RDS(ON)= 0.45 Ω @ VGS = 4.5 V; RDS(ON)= 0.6 Ω @ VGS= 2.7 V; (2)Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V; (3)Gate-Source Zener for ESD ruggedness.>6kV Human Body Model; (4)Compact industry standard SOT-23 surface mount package; (5)Alternative to TN0200T and TN0201T.

Diagrams

FDV303N block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDV303N
FDV303N

Fairchild Semiconductor

MOSFET N-Ch Digital

Data Sheet

0-1: $0.22
1-25: $0.15
25-100: $0.11
100-250: $0.07
FDV303N_NB9U008
FDV303N_NB9U008

Fairchild Semiconductor

MOSFET N-Ch Digital

Data Sheet

Negotiable 
FDV303N_Q
FDV303N_Q

Fairchild Semiconductor

MOSFET N-Ch Digital

Data Sheet

Negotiable