Product Summary
The FDN302P is a P-Channel 2.5V specified MOSFET. It uses a rugged gate version of Fairchild’s advanced PowerTrench process. The FDN302P has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications are Power management, Load switch and Battery protection.
Parametrics
FDN302P absolute maximum ratings: (1)VDSS Drain-Source Voltage –20 V; (2)VGSS Gate-Source Voltage ±12 V; (3)ID Drain Current–2.4 A; (4)Maximum Power Dissipation 0.46W; (5)TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150℃.
Features
FDN302P features: (1)–20 V, –2.4 A. RDS(ON) = 0.055Ω @ VGS = –4.5 V RDS(ON) = 0.080Ω @ VGS = –2.5 V; (2)Fast switching speed; (3)High performance trench technology for extremely low RDS(ON); (4)SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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FDN302P |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH 2.5V |
Data Sheet |
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FDN302P_Q |
Fairchild Semiconductor |
MOSFET SSOT-3 P-CH 2.5V |
Data Sheet |
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