Product Summary

The FDN302P is a P-Channel 2.5V specified MOSFET. It uses a rugged gate version of Fairchild’s advanced PowerTrench process. The FDN302P has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). Applications are Power management, Load switch and Battery protection.

Parametrics

FDN302P absolute maximum ratings: (1)VDSS Drain-Source Voltage –20 V; (2)VGSS Gate-Source Voltage ±12 V; (3)ID Drain Current–2.4 A; (4)Maximum Power Dissipation 0.46W; (5)TJ, TSTG Operating and Storage Junction Temperature Range –55 to +150℃.

Features

FDN302P features: (1)–20 V, –2.4 A. RDS(ON) = 0.055Ω @ VGS = –4.5 V RDS(ON) = 0.080Ω @ VGS = –2.5 V; (2)Fast switching speed; (3)High performance trench technology for extremely low RDS(ON); (4)SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint.

Diagrams

FDN302P block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FDN302P
FDN302P

Fairchild Semiconductor

MOSFET SSOT-3 P-CH 2.5V

Data Sheet

0-1: $0.28
1-25: $0.23
25-100: $0.16
100-250: $0.15
FDN302P_Q
FDN302P_Q

Fairchild Semiconductor

MOSFET SSOT-3 P-CH 2.5V

Data Sheet

0-1: $0.12
1-25: $0.12
25-100: $0.11
100-250: $0.11