(China (Mainland))
Product Summary
The FDC796N is an N-Channel MOSFET. It has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Applications of the FDC796N are DC/DC converter, Power management and Load switch.
Parametrics
FDC796N absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ± 20V; (3)ID Drain Current: 12.5 A; (4)Maximum Power Dissipation: 2 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDC796N features: (1)12.5 A, 30 V. RDS(ON)= 9 mΩ @ VGS = 10 V, RDS(ON) = 12 mΩ @ VGS = 4.5 V; (2)High performance trench technology for extremely low RDS(ON); (3)Low gate charge; (4)High power and current handling capability; (5)Fast switching speed.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDC796N |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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|
FDC796N_F077 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PwrTrench |
Data Sheet |
Negotiable |
|
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|
FDC796N_Q |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
Negotiable |
|
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