Product Summary
The FDC6306P is a P-Channel 2.5V specified MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. Applications of the FDC6306P are Load switch, Battery protection and Power management.
Parametrics
FDC6306P absolute maximum ratings: (1)VDSS Drain-Source Voltage: -20 V; (2)VGSS Gate-Source Voltage: ±8V; (3)ID Drain Current: -1.9 A; (4)PD Power Dissipation: 0.96 W; (5)TJ, Tstg Operating and Storage Junction Temperature Range: -55 to +150℃.
Features
FDC6306P features: (1)-1.9 A, -20 V. RDS(on)= 0.170Ω @ VGS = -4.5 V, RDS(on) = 0.250Ω @ VGS = -2.5 V; (2)Low gate charge (3 nC typical); (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
FDC6306P |
Fairchild Semiconductor |
MOSFET SSOT-6 P-CH -20V |
Data Sheet |
|
|
|||||||||||||
FDC6306P_D87Z |
Fairchild Semiconductor |
MOSFET |
Data Sheet |
Negotiable |
|
|||||||||||||
FDC6306P_Q |
Fairchild Semiconductor |
MOSFET SSOT-6 P-CH -20V |
Data Sheet |
Negotiable |
|