Product Summary
The BFP67W is a Silicon NPN Planar RF Transistor. It is suitable for Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.
Parametrics
BFP67W absolute maximum ratings: (1)Collector-base voltage VCBO: 20 V; (2)Collector-emitter voltage VCEO: 10 V; (3)Emitter-base voltage VEBO: 2.5 V; (4)Collector current IC: 50 mA; (5)Total power dissipation, Ptot: 200 mW; (6)Junction temperature Tj: 150℃; (7)Storage temperature range Tstg: –65 to +150℃.
Features
BFP67W features: (1)Small feedback capacitance; (2)Low noise figure; (3)High transition frequency.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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BFP67W |
Other |
Data Sheet |
Negotiable |
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