Product Summary

The BFP420 is an NPN Silicon RF Transistor.

Parametrics

BFP420 absolute maximum ratings: (1)Collector-emitter voltage VCES: 15V; (2)Collector-base voltage VCBO: 15V; (3)Emitter-base voltage VEBO: 1.5V; (4)Collector current IC: 35 mA; (5)Base current IB: 3mA; (6)Total power dissipation, Ptot: 160 mW; (7)Junction temperature Tj: 150℃; (8)Ambient temperature TA: -65 to 150℃; (9)Storage temperature Tstg: -65 to 150℃.

Features

BFP420 features: (1)For high gain low noise amplifiers; (2)For oscillators up to 10 GHz; (3)Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 21 dB at 1.8 GHz; (4)Transition frequency fT = 25 GHz; (5)Gold metallization for high reliability; (6)SIEGET 25 GHz fT - Line; (7)Pb-free (RoHS compliant) package1); (8)Qualified according AEC Q101.

Diagrams

BFP420 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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BFP420
BFP420

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Data Sheet

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BFP420 E6327
BFP420 E6327

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BFP420E6327
BFP420E6327


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BFP420F
BFP420F

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Data Sheet

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