(China (Mainland))
Product Summary
The BFM505 is a Dual transistor with two silicon NPN RF dies in a surface mount, 6-pin SOT363 (S-mini) package. The transistors are primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular phones, cordless phones, radar detectors, pagers and satellite TV-tuners. The applications of the BFM505 are Oscillator and buffer amplifiers, Balanced amplifiers and LNA/mixer.
Parametrics
BFM505 absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 20 V; (2)VCEO collector-emitter voltage open base: 8V; (3)VEBO emitter-base voltage open collector: 2.5 V; (4)IC DC collector current: 18 mA; (5)Ptot total power dissipation: 500 mW; (6)Tstg storage temperature: -65 to +175℃; (7)Tj junction temperature: 175℃.
Features
BFM505 features: (1)Small size; (2)Temperature and hFE matched; (3)Low noise and high gain; (4)High gain at low current and low capacitance at low voltage; (5)Gold metallization ensures excellent reliability.
Diagrams
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 BFM505 |
Other |
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Data Sheet |
Negotiable |
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BFM505 T/R |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS |
Data Sheet |
Negotiable |
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BFM505,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS |
Data Sheet |
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