Product Summary
The BFG410W is an NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. The applications of the BFG410W are (1)RF front end; (2)Wideband applications, e.g. analog and digital cellular telephones, cordless telephones (PHS, DECT, etc.); (3)Radar detectors; (4)Pagers; (5)Satellite television tuners (SATV); (6)High frequency oscillators.
Parametrics
BFG410W absolute maximum ratings: (1)VCBO collector-base voltage open emitter: 10 V; (2)VCEO collector-emitter voltage open base: 4.5 V; (3)VEBO emitter-base voltage open collector: 1V; (4)IC collector current (DC): 12 mA; (5)Ptot total power dissipation: 54 mW; (6)Tstg storage temperature: -65 yo +150℃; (7)Tj operating junction temperature: 150℃.
Features
BFG410W features: (1)Very high power gain; (2)Low noise figure; (3)High transition frequency; (4)Emitter is thermal lead; (5)Low feedback capacitance.
Diagrams
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BFG410W |
Other |
Data Sheet |
Negotiable |
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BFG410W,115 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal TAPE-7 TNS-RFSS |
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BFG410W,135 |
NXP Semiconductors |
Transistors RF Bipolar Small Signal Single NPN 4.5V 10mA 54mW 50 22GHz |
Data Sheet |
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