Product Summary

The BF998R is a silicon N_Channel MOSFET tetrode.

Parametrics

BF998R absolute maximum ratings: (1)Drain-source voltage VDS: 12 V; (2)Continuous drain current ID: 30 mA; (3)Gate 1/ gate 2-source current ±IG1/2SM: 10mA; (4)Total power dissipation: 200mA; (5)Storage temperature Tstg: -55 to 150 ℃; (6)Channel temperature Tch: 150℃.

Features

BF998R features: (1)Short-channel transistor with high S / C quality factor; (2)For low-noise, gain-controlled input stage up to 1 GHz.

Diagrams

BF998R Simplified outline

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BF998R
BF998R

Other


Data Sheet

Negotiable 
BF998R,215
BF998R,215

NXP Semiconductors

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Data Sheet

0-1: $0.24
1-25: $0.21
25-100: $0.18
100-250: $0.17
BF998R,235
BF998R,235

NXP Semiconductors

Transistors RF MOSFET Small Signal Dual N-Channel 12V 30mA 200mW

Data Sheet

0-7000: $0.10
7000-10000: $0.08
BF998RW
BF998RW

Other


Data Sheet

Negotiable