Product Summary

The BCW60C is an NPN Silicon AF Transistor.

Parametrics

BCW60C absolute maximum ratings: (1)Collector-emitter voltage VCEO: 32V; (2)Collector-base voltage VCBO: 32V; (3)Emitter-base voltage VEBO: 5V; (4)DC collector current IC: 100 mA; (5)Peak collector current ICM: 200mA; (6)Peak base current IBM: 200mA; (7)Total power dissipation, TS = 71℃ Ptot: 330 mW; (8)Junction temperature Tj: 150℃; (9)Storage temperature Tstg: -65 to 150℃; (10)Junction - soldering point1) RthJS: ≦240 K/W.

Features

BCW60C features: (1)For AF input stages and driver applications; (2)High current gain; (3)Low collector-emitter saturation voltage; (4)Low noise between 30 Hz and 15 kHz; (5)Complementary types: BCW61, BCX71 (PNP).

Diagrams

BCW60C block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
BCW60C T/R
BCW60C T/R
NXP Semiconductors
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Data Sheet
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BCW60C,215
BCW60C,215
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Data Sheet
0-1: $0.04
1-25: $0.04
25-100: $0.03
100-250: $0.03
BCW60C_Q
BCW60C_Q
Fairchild Semiconductor
Transistors Bipolar (BJT) NPN/ 32V/ 100mA
Data Sheet
Negotiable 
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BCW60CLT1
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BCW60CTC
Diodes Inc. / Zetex
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Data Sheet
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BCW60CTA
Diodes Inc. / Zetex
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Data Sheet
Negotiable 
BCW60CT116
BCW60CT116
ROHM Semiconductor
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Data Sheet
Negotiable