(China (Mainland))
Product Summary
The BCV62B is a PNP Silicon Double Transistor.
Parametrics
BCV62B absolute maximum ratings: (1)Collector-emitter voltage, VCEO: 30 V; (2)Collector-base voltage (open emitter) (transistor T1), VCBO: 30V; (3)Emitter-base voltage VEBS: 6V; (4)DC collector current IC: 100 mA; (5)Peak collector current ICM: 200mA; (6)Base peak current (transistor T1) IBM: 200mA; (7)Total power dissipation, TS = 99℃ Ptot: 300 mW; (8)Junction temperature Tj: 150℃; (9)Storage temperature Tstg: -65 to 150℃.
Features
BCV62B features: (1)To be used as a current mirror; (2)Good thermal coupling and VBE matching; (3)High current gain; (4)Low collector-emitter saturation voltage.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 BCV62B,235 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MATCHED PAIR |
Data Sheet |
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BCV62B,215 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
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BCV62B T/R |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS GP TAPE-7 |
Data Sheet |
Negotiable |
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BCV62B /T3 |
NXP Semiconductors |
Transistors Bipolar (BJT) TRANS MATCHED PAIR TAPE-11 |
Data Sheet |
Negotiable |
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