(China (Mainland))
Product Summary
The 9N60 is a kind of N-Channel Mosfet Transistor designed for high efficiency switch mode power supply.
Parametrics
9N60 absolute maximum ratings:(1)VDSS, Drain-Source Voltage: 600 V; (2)VGS, Gate-Source Voltage-Continuous: ±20 V; (3)ID, Drain Current-Continuous: 8.5 A; (4)IDM, Drain Current-Single Plused: 34 A; (5)PD, Total Dissipation @TC=25℃: 125 W; (6)Tj, Max. Operating Junction Temperature: 150 ℃; (7)Tstg, Storage Temperature: -55 to 150 ℃.
Features
9N60 features: (1)Drain Current ID= 8.5A@ TC=25℃; (2)Drain Source Voltage: VDSS= 600V(Min); (3)Static Drain-Source On-Resistance: RDS(on) = 1.0Ω(Max); (4)Avalanche Energy Specified; (5)Fast Switching; (6)Simple Drive Requirements.
Diagrams
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| Image | Part No | Mfg | Description | |
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9N60 |
Other |
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Data Sheet |
Negotiable |
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