(China (Mainland))
Product Summary
The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. The 8N60 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Parametrics
8N60 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Gate-Source Voltage, VGSS: ± 30 V; (3)Avalanche Current, IAR: 7.5 A; (4)Drain Current: Continuous, ID: 7.5 A; Pulsed, IDM: 30 A; (5)Avalanche Energy: Single Pulsed, EAS: 230 mJ; Repetitive, EAR: 14.7 mJ; (6)Peak Diode Recovery, dv/dt: 4.5 V/ns; (7)Power Dissipation, PD: TO-220/ TO-262: 147W; TO-220F/TO-220F1: 48W; (8)Junction Temperature, TJ: +150℃; (9)Operating Temperature, TOPR: -55 to +150℃; (10)Storage Temperature, TSTG: -55 to +150℃.
Features
8N60 features: (1)VDS = 600V; (2)ID = 7.5A; (3)RDS(ON) = 1.2Ω@VGS = 10 V; (4)Ultra low gate charge ( typical 28 nC ); (5)Low reverse transfer capacitance ( CRSS = typical 12.0 pF ); (6)Fast switching capability; (7)Avalanche energy specified; (8)Improved dv/dt capability, high ruggedness.
Diagrams
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