(China (Mainland))
Product Summary
The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. The 4N60 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Parametrics
4N60 absolute maximum ratings: 10N60 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Gate-Source Voltage, VGSS: ± 30 V; (3)Avalanche Current, IAR: 4.4 A; (4)Drain Current: Continuous, ID: 4.0 A; Pulsed, IDM: 16 A; (5)Avalanche Energy: Single Pulsed, EAS: 260 mJ; Repetitive, EAR: 10.6 mJ; (6)Peak Diode Recovery, dv/dt: 4.5 V/ns; (7)Power Dissipation, PD: TO-220/TO-262/TO-263: 106W; TO-220F/TO-220F1: 36W; TO-220F2: 38W; TO-251/ TO-252: 50W; (8)Junction Temperature, TJ: +150℃; (9)Operating Temperature, TOPR: -55 to +150℃; (10)Storage Temperature, TSTG: -55 to +150℃.
Features
4N60 features: (1)RDS(ON) = 2.5Ω @VGS = 10 V; (2)Ultra Low Gate Charge ( typical 15 nC ); (3)Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF ); (4)Fast Switching Capability; (5)Avalanche Energy Specified; (6)Improved dv/dt Capability, high Ruggedness.
Diagrams
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