Product Summary
The 2SC5800 is an NPN silicon RF transistor for high-frequency low noise flat-lead 3-pin thin-type ultra super minimold.
Parametrics
2SC5800 absolute maximum ratings: (1)Collector to Base Voltage VCBO: 9.0 V; (2)Collector to Emitter Voltage VCEO: 5.5 V; (3)Emitter to Base Voltage VEBO: 1.5 V; (4)Collector Current IC: 100 mA; (5)Total Power Dissipation Ptot: 200 mW; (6)Junction Temperature Tj: 150℃; (7)Storage Temperature Tstg: -65 to +150℃.
Features
2SC5800 features: (1)Low phase distortion, low voltage operation; (2)Ideal for OSC applications; (3)Flat-lead 3-pin thin-type ultra super minimold package.
Diagrams
2SC5000 |
Other |
Data Sheet |
Negotiable |
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2SC5001TLQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
Data Sheet |
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2SC5001TLR |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 20V 10A |
Data Sheet |
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2SC5002 |
Other |
Data Sheet |
Negotiable |
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2SC5003 |
Other |
Data Sheet |
Negotiable |
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2SC5004 |
Other |
Data Sheet |
Negotiable |
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