Product Summary

The 2SC5750 is an NPN silicon RF transistor for medium output power amplification (30 mW) 4-pin super minimold.

Parametrics

2SC5750 absolute maximum ratings: (1)Collector to Base Voltage VCBO: 9.0 V; (2)Collector to Emitter Voltage VCEO: 6.0 V; (3)Emitter to Base Voltage VEBO: 2.0 V; (4)Collector Current IC: 50 mA; (5)Total Power Dissipation Ptot: 200 mW; (6)Junction Temperature Tj: 150℃; (7)Storage Temperature Tstg: -65 to +150℃.

Features

2SC5750 features: (1)Ideal for medium output power amplification; (2)PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm; (3)HFT3 technology (fT = 12 GHz) adopted; (4)High reliability through use of gold electrodes; (5)4-pin super minimold package.

Diagrams

2SC5750 dimensions

2SC5000
2SC5000

Other


Data Sheet

Negotiable 
2SC5001TLQ
2SC5001TLQ

ROHM Semiconductor

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Data Sheet

0-1: $0.63
1-25: $0.55
25-100: $0.42
100-500: $0.28
2SC5001TLR
2SC5001TLR

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 20V 10A

Data Sheet

0-2500: $0.24
2500-5000: $0.24
2SC5002
2SC5002

Other


Data Sheet

Negotiable 
2SC5003
2SC5003

Other


Data Sheet

Negotiable 
2SC5004
2SC5004

Other


Data Sheet

Negotiable