Product Summary
The 2SC5750 is an NPN silicon RF transistor for medium output power amplification (30 mW) 4-pin super minimold.
Parametrics
2SC5750 absolute maximum ratings: (1)Collector to Base Voltage VCBO: 9.0 V; (2)Collector to Emitter Voltage VCEO: 6.0 V; (3)Emitter to Base Voltage VEBO: 2.0 V; (4)Collector Current IC: 50 mA; (5)Total Power Dissipation Ptot: 200 mW; (6)Junction Temperature Tj: 150℃; (7)Storage Temperature Tstg: -65 to +150℃.
Features
2SC5750 features: (1)Ideal for medium output power amplification; (2)PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm; (3)HFT3 technology (fT = 12 GHz) adopted; (4)High reliability through use of gold electrodes; (5)4-pin super minimold package.
Diagrams
2SC5000 |
Other |
Data Sheet |
Negotiable |
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2SC5001TLQ |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN; HFE RANK Q CPT3 |
Data Sheet |
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2SC5001TLR |
ROHM Semiconductor |
Transistors Bipolar (BJT) NPN 20V 10A |
Data Sheet |
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2SC5002 |
Other |
Data Sheet |
Negotiable |
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2SC5003 |
Other |
Data Sheet |
Negotiable |
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2SC5004 |
Other |
Data Sheet |
Negotiable |
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