Product Summary

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. The 2N60 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Parametrics

2N60 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Gate-Source Voltage, VGSS: ±30 V; (3)Avalanche Current, IAR: 2.0 A; (4)Drain Current: Continuous, ID: 2.0 A; Pulsed, IDM: 8.0 A; (5)Avalanche Energy: Single Pulsed, EAS: 140 mJ; Repetitive, EAR: 4.5 mJ; (6)Peak Diode Recovery, dv/dt: 4.5 V/ns; (7)Junction Temperature, TJ: +150℃; (8)Operating Temperature, TOPR: -55 to +150℃; (9)Storage Temperature, TSTG: -55 to +150℃.

Features

2N60 features: (1)RDS(ON) = 5Ω@VGS = 10V; (2)Ultra Low gate charge (typical 9.0nC); (3)Low reverse transfer capacitance (CRSS = typical 5.0 pF); (4)Fast switching capability; (5)Avalanche energy specified; (6)Improved dv/dt capability, high ruggedness.

Diagrams

2N60 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
2N60
2N60
Other

Data Sheet
Negotiable 
2N6027
2N6027
Central Semiconductor
SCRs Prog Uni-Junction
Data Sheet
0-2500: $0.41
2500-5000: $0.40
5000-10000: $0.37
2N6027G
2N6027G
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
0-1: $0.22
1-25: $0.16
25-100: $0.11
100-500: $0.09
2N6027RL1
2N6027RL1

THYRISTOR PROG UNIJUNCT 40V TO92
Data Sheet
Negotiable 
2N6027RL1G
2N6027RL1G
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
0-1: $0.10
1-25: $0.09
25-100: $0.09
100-500: $0.08
2N6027RLRA
2N6027RLRA
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
Negotiable 
2N6027RLRAG
2N6027RLRAG
ON Semiconductor
SCRs 40V 300mW PUT
Data Sheet
0-1: $0.28
1-25: $0.19
25-100: $0.15
100-500: $0.10
2N6028
2N6028
Central Semiconductor
SCRs Prog Uni-Junction
Data Sheet
0-2500: $0.24
2500-5000: $0.23