(China (Mainland))
Product Summary
The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. The 10N60 is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
Parametrics
10N60 absolute maximum ratings: (1)Drain-Source Voltage, VDSS: 600 V; (2)Gate-Source Voltage, VGSS: ± 30 V; (3)Avalanche Current, IAR: 10 A; (4)Drain Current: Continuous, ID: 10 A; Pulsed, IDM: 38 A; (5)Avalanche Energy: Single Pulsed, EAS: 700 mJ; Repetitive, EAR: 15.6 mJ; (6)Peak Diode Recovery, dv/dt: 4.5 V/ns; (7)Power Dissipation, PD: TO-220/ TO-263: 156W; TO-220F/TO-220F1: 50W; TO-220F2: 52W; (8)Junction Temperature, TJ: +150℃; (9)Operating Temperature, TOPR: -55 to +150℃; (10)Storage Temperature, TSTG: -55 to +150℃.
Features
10N60 features: (1)RDS(ON) = 0.8Ω@VGS =10V; (2)Low gate charge ( typical 44nC); (3)Low CRSS ( typical 18 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 10N60 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
10N60PM |
Other |
|
Data Sheet |
Negotiable |
|
||||
